Title :
Wafer fused long wavelength vertical cavity lasers
Author :
Dudley, J.J. ; Babic, D.I. ; Yang, L. ; Mirin, R. ; Miller, B.I. ; Ram, R.J. ; Reynolds, T. ; Hu, E.L. ; Bowers, J.E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
We demonstrate lasing in InGaAsP (1.3 μm) vertical cavity lasers employing GaAs/AlAs mirrors on a GaAs substrate. The lasers operate pulsed at 300 K with a threshold current of 9 mA and they operate continuous wave at temperatures as high as 230 K
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser beams; laser cavity resonators; laser mirrors; laser variables measurement; semiconductor lasers; surface emitting lasers; 1.3 mum; 230 K; 300 K; 9 mA; GaAs; GaAs substrate; GaAs-AlAs; GaAs/AlAs mirrors; InGaAsP; continuous wave operation; lasing; long wavelength vertical cavity lasers; pulsed operation; threshold current; vertical cavity lasers; Gallium arsenide; Indium phosphide; Mirrors; Optical materials; Optical pulses; Polyimides; Sputter etching; Temperature; Threshold current; Wet etching;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379311
