Title :
Pure strain effect on high-frequency modulation capability of InP-based strained-layer multiple-quantum-well lasers
Author :
Seki, S. ; Yamanaka, T. ; Lui, W. ; Yoshikuni, Y. ; Yokoyama, K.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Abstract :
The authors have studied the pure strain effect on the differential gain and the resonance frequency of InP-based SL-QWLs and have demonstrated that tensile strain exerts a more pronounced impact on the improvement of their high-frequency modulation capability compared with compressive strain
Keywords :
III-V semiconductors; frequency modulation; gallium arsenide; gallium compounds; indium compounds; optical modulation; quantum well lasers; InGaAsP-InP; InP-based laser; compressive strain; differential gain; high-frequency modulation capability; resonance frequency; strain effect; strained-layer multiple-quantum-well lasers; tensile strain; Capacitive sensors; Conducting materials; Indium gallium arsenide; Indium phosphide; Laboratories; Lattices; Potential well; Quantum well devices; Quantum well lasers; Tensile strain;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379319
