Damping effects in InGaAs/InP MQW Fabry-Perot lasers: the role of the threshold carrier density

Author

McDonald, David ; O´Dowd, Ronan F.

Author_Institution

Dept. of Electron. Eng., Univ. Coll. Dublin, Ireland

fYear

1993

fDate

15-18 Nov 1993

Firstpage

580

Lastpage

581

Abstract

In the present work the differential gain values for four Fabry-Perot (FP) InGaAs quantum well lasers of different lengths from the same wafer have been measured from their parasitic free relative intensity noise (RIN) spectra. Using the single mode rate equations, with Langevin noise sources, the measured RIN has been curve fitted in order to extract pertinent parameters related to the dynamic characteristic of the structure. By isolating the dependence of these parameters as a function of cavity length, a variation of the effective gain compression parameter with threshold gain is observed

Keywords

Fabry-Perot resonators; III-V semiconductors; carrier density; damping; gallium arsenide; indium compounds; laser cavity resonators; laser modes; laser noise; quantum well lasers; Fabry-Perot InGaAsP quantum well lasers; InGaAs-InP; InGaAs/InP MQW Fabry-Perot lasers; Langevin noise source; cavity length; damping effects; differential gain values; dynamic characteristic; effective gain compression parameter; parasitic free relative intensity noise; relative intensity noise spectra; single mode rate equations; threshold carrier density; threshold gain; Damping; Fabry-Perot; Gain measurement; Indium gallium arsenide; Indium phosphide; Laser modes; Laser noise; Noise measurement; Quantum well devices; Quantum well lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE

Conference_Location

San Jose, CA

Print_ISBN

0-7803-1263-5

Type

conf

DOI

10.1109/LEOS.1993.379321

Filename

379321