Title :
35-dB small-signal-gain high-power diffraction-limited tapered semiconductor amplifier
Author :
Ych, Ping-Hui S. ; Wu, I-Fan ; Jiang, Shijun ; Dagenais, Mario
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Abstract :
Summary form only given. GaAs-AlGaAs GRINSCH single quantum well tapered semiconductor optical amplifier characterisation and fabrication. We demonstrated 6 mW of coupled input power, and more than 4.5 W of pulsed output power
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical fabrication; quantum well lasers; 35 dB; 4.5 W; 6 mW; GaAs-AlGaAs; GaAs-AlGaAs GRINSCH single quantum well tapered semiconductor optical amplifier; coupled input power; high-power diffraction-limited tapered semiconductor amplifier; laser fabrication; pulsed output power; small-signal-gain; Diffraction; High power amplifiers; Semiconductor optical amplifiers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379325
