Title :
InAlGaAs/GaAs strained-layer superluminescent diodes
Author :
Murison, R. ; Moore, A. ; Henderson, R. ; Holehouse, H.
Author_Institution :
EG&G Optoelectron., Quebec, Que., Canada
Abstract :
Summary form only given. We describe a high performance InAlGaAs/GaAs superluminescent diode operating in the 830 nm wavelength window, exhibiting spectral modulation below 1% at powers up to and exceeding 50 mW, with good coupling efficiency into polarisation maintaining (PMF) fiber, and high reliability. A longitudinal spatial hole burning model is used to describe device performance
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; optical hole burning; optical modulation; semiconductor device models; semiconductor device reliability; superluminescent diodes; superradiance; 50 mW; 830 nm; 830 nm wavelength window; InAlGaAs-GaAs; InAlGaAs/GaAs strained-layer superluminescent diodes; PMF fiber; device performance; good coupling efficiency; high performance; high reliability; longitudinal spatial hole burning model; spectral modulation; Gallium arsenide; Superluminescent diodes;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379332
