Title :
High-power GaInAs/GaInAsP/GaInP 980-nm pump lasers
Author :
Asonen, H. ; Outchinnikov, A. ; Zhang, G. ; Nappi, J. ; Savolainen, P. ; Pessa, M.
Author_Institution :
Tampere Univ. of Technol., Finland
Abstract :
This paper reports on fabrication and characteristics of Al-free quantum well GaInAs/GaInAsP/GaInP lasers intended for pumping erbium doped fiber optic amplifiers which operate at the wavelength of 980 nm
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical communication equipment; optical pumping; quantum well lasers; 980 nm; Al-free quantum well GaInAs/GaInAsP/GaInP lasers; GaInAs; GaInAs/GaInAsP/GaInP 980-nm pump lasers; GaInAsP; GaInP; diode laser fabrication; erbium doped fiber optic amplifiers; high-power lasers; laser pumping; Doped fiber amplifiers; Erbium; Erbium-doped fiber amplifier; Erbium-doped fiber lasers; Laser excitation; Optical device fabrication; Optical fiber amplifiers; Optical fibers; Pump lasers; Quantum well lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379333
