Title :
Accurate flux estimation during molecular beam epitaxy growth of vertical-cavity surface-emitting lasers
Author :
Couturier, L. ; Grosse, P. ; Grouillet, A. ; Chenevas-Paule, A.
Author_Institution :
LETI, CEA-Technol. Adv., Grenoble, France
fDate :
29 Apr-3 May 1996
Abstract :
We report an in-situ method for accurate flux monitoring in gas-source molecular-beam epitaxy (GSMBE) growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement on the incomplete structure to estimate the values of the effusion cell fluxes (and therefore the thickness and the composition of the different layers) used for the growth of the first part of the device. The flux values are extracted using a simulated annealing algorithm. Before completing the structure, corrections are made in order to centre the cavity resonance of the final device at the desired wavelength
Keywords :
III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; gallium arsenide; laser cavity resonators; reflectivity; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; surface emitting lasers; GaAs-AlGaAs; cavity resonance; effusion cell fluxes; flux monitoring; gas-source MBE; layer composition; layer thickness; molecular beam epitaxy; reflectivity; simulated annealing algorithm; vertical-cavity surface-emitting lasers; Gallium arsenide; Geometrical optics; Mirrors; Molecular beam epitaxial growth; Optical interferometry; Optical surface waves; Reflectivity; Spectroscopy; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.571114
