Accurate flux estimation during molecular beam epitaxy growth of vertical-cavity surface-emitting lasers

Author

Couturier, L. ; Grosse, P. ; Grouillet, A. ; Chenevas-Paule, A.

Author_Institution

LETI, CEA-Technol. Adv., Grenoble, France

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

337

Lastpage

340

Abstract

We report an in-situ method for accurate flux monitoring in gas-source molecular-beam epitaxy (GSMBE) growth of vertical-cavity surface-emitting lasers (VCSELs). The method uses a single reflectivity spectrum measurement on the incomplete structure to estimate the values of the effusion cell fluxes (and therefore the thickness and the composition of the different layers) used for the growth of the first part of the device. The flux values are extracted using a simulated annealing algorithm. Before completing the structure, corrections are made in order to centre the cavity resonance of the final device at the desired wavelength

Keywords

III-V semiconductors; aluminium compounds; chemical beam epitaxial growth; gallium arsenide; laser cavity resonators; reflectivity; semiconductor epitaxial layers; semiconductor growth; semiconductor lasers; surface emitting lasers; GaAs-AlGaAs; cavity resonance; effusion cell fluxes; flux monitoring; gas-source MBE; layer composition; layer thickness; molecular beam epitaxy; reflectivity; simulated annealing algorithm; vertical-cavity surface-emitting lasers; Gallium arsenide; Geometrical optics; Mirrors; Molecular beam epitaxial growth; Optical interferometry; Optical surface waves; Reflectivity; Spectroscopy; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.571114

Filename

571114