Title :
Low threshold, high power 624 nm laser diodes
Author :
Geels, Randall S. ; Welch, David F. ; Bour, David P. ; Treat, David W. ; Bringans, Ross D.
Author_Institution :
SDL Inc., San Jose, CA, USA
Abstract :
In summary, we report AlGaInP semiconductor laser diodes emitting output powers up to 39 mW CW at RT using an active region with a single quaternary compressively strained QW. Threshold currents as low as 55 mA have been obtained. The maximum operation temperature is greater than 40 C
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; quantum well lasers; 39 mW; 40 C; 55 mA; 624 nm; AlGaInP; CW lasers; active region; low threshold high power laser diodes; maximum operation temperature; output powers; semiconductor laser diodes; single quaternary compressively strained QW; threshold currents; Diode lasers; Laser modes; Power generation; Power lasers; Pump lasers; Reflectivity; Semiconductor lasers; Solid lasers; Temperature; Threshold current;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379336
