Gain characteristics of red AlGaInP VCSELs

Author

Lott, J.A. ; Schneider, R.P., Jr. ; Zolper, J.C. ; Choquette, K.D. ; Malloy, K.J.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

fYear

1993

fDate

15-18 Nov 1993

Firstpage

611

Lastpage

612

Abstract

We report the characteristics of electrically injected visible vertical cavity surface emitting lasers (VCSELs) operating over a wide range of wavelengths, from 643 to 664 nm. The devices are grown on (311)A substrates, and consist of an 8-wave thick AlGaInP strained quantum well optical cavity active region surrounded by distributed Bragg reflectors (DBRs). Pulsed room temperature lasing is obtained, for the first time, at the n=l (664 nm) quantum well transition. Shorter wavelength operation has also been obtained, due to gain contributions from the n=2 state

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; indium compounds; laser cavity resonators; laser transitions; quantum well lasers; surface emitting lasers; (311)A substrates; 643 to 664 nm; AlGaInP; AlGaInP strained quantum well optical cavity active region; distributed Bragg reflectors; electrically injected; gain characteristics; gain contributions; n=2 state; pulsed room temperature lasing; quantum well transition; red AlGaInP VCSELs; shorter wavelength operation; visible vertical cavity surface emitting lasers; Distributed Bragg reflectors; Optical devices; Optical pulses; Optical surface waves; Quantum well lasers; Stimulated emission; Surface emitting lasers; Surface waves; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE

Conference_Location

San Jose, CA

Print_ISBN

0-7803-1263-5

Type

conf

DOI

10.1109/LEOS.1993.379337

Filename

379337