Title :
Continuous wave visible InGaP/InGaAlP quantum well surface emitting laser diodes
Author :
Huang, K.F. ; Tai, K. ; Wu, C.C. ; Wynn, J.D.
Author_Institution :
Dept. of Electro-Phys., Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
Recently electrical injected visible vertical surface emitting lasers (VCSELs) have been reported with a pulsed threshold current of about 30 mA. In this paper we report for the first time the continuous wave (cw) operation of such visible DBR InGaP-InGaAlP QW VCSEL diodes
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium compounds; indium compounds; laser cavity resonators; quantum well lasers; surface emitting lasers; 30 mA; DBR InGaP-InGaAlP QW VCSEL diodes; InGaP-InGaAlP; continuous wave visible quantum well surface emitting laser diodes; cw operation; electrical injected; pulsed threshold current; visible vertical surface emitting lasers; Diode lasers; Distributed Bragg reflectors; Lasers and electrooptics; Optical pulses; Quantum well lasers; Surface emitting lasers; Surface waves; Temperature; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379338
