Spectral behavior of InP-based ring lasers employing multimode interference devices

Author

Pennings, E.C.M. ; van Roijen, R. ; van Stralen, M.J.N. ; Verbeek, B.H. ; van der Heijden, J.M.M.

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

1993

fDate

15-18 Nov 1993

Firstpage

617

Lastpage

618

Abstract

The performance of ultracompact efficient InP-based ring lasers may degrade due to lasing inside the MMI 3dB coupler. This effect can be reduced by using angled, rough or absorbing end-facets of the MMI section. Optimum MMI lengths maximize decoupling between internal and external resonances. Lasing inside the MMI coupler can be prevented by employing a passive MMI coupler which will also reduce the threshold current. We expect that these findings will lead to further improvement in the performance of these ring lasers

Keywords

III-V semiconductors; indium compounds; laser accessories; light interference; optical couplers; ring lasers; semiconductor lasers; InP; absorbing end-facets; angled end-facets; decoupling; external resonances; internal resonances; multimode interference devices; passive MMI coupler; rough end-facets; spectral behavior; threshold current; ultracompact InP-based ring lasers; Couplers; Etching; Interference; Laser beam cutting; Laser mode locking; Optical coupling; Optical reflection; Resonance; Ring lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE

Conference_Location

San Jose, CA

Print_ISBN

0-7803-1263-5

Type

conf

DOI

10.1109/LEOS.1993.379340

Filename

379340