Title :
Low threshold InGaAs-AlGaAs-GaAs strained-layer quantum well heterostructure square ring lasers
Author :
Han, H. ; Forbes, D.V. ; Coleman, J.J.
Author_Institution :
Microelectron. Lab., Illinois Univ., Urbana, IL, USA
Abstract :
We have described a monolithically integrated strained-layer InGaAs SCH square ring laser using narrow grooves to couple out light from the ring resonator to the straight output waveguides and demonstrated the asymmetry of two lasing modes from two output waveguides of different lengths in the emission spectra as well as in the output powers
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optics; laser modes; quantum well lasers; ring lasers; InGaAs-AlGaAs-GaAs; emission spectra; grooves; lasing mode asymmetry; light coupling; low threshold laser; monolithically integrated strained-layer InGaAs SCH square ring laser; output power; output waveguides; quantum well heterostructure laser; ring resonator; Etching; Laser modes; Optical reflection; Optical ring resonators; Optical waveguides; Power generation; Quantum well lasers; Ring lasers; Semiconductor lasers; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379341
