• DocumentCode
    2483331
  • Title

    Self-aligned single-lateral-mode waveguide diode ring lasers

  • Author

    Liang, James J. ; Ballantyne, Joseph M.

  • Author_Institution
    Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
  • fYear
    1993
  • fDate
    15-18 Nov 1993
  • Firstpage
    621
  • Lastpage
    622
  • Abstract
    The majority of semiconductor ring lasers reported to date, have been formed by etching the waveguide through the entire active region, which results in multi-lateral mode operation. In order to make single-lateral-mode ring lasers with etched facets, the waveguide and the facet have to be etched separately, with the facet deep etched, but the waveguide shallow etched
  • Keywords
    etching; laser modes; optical fabrication; quantum well lasers; ring lasers; waveguide lasers; deep etched facet; entire active region; etched facets; multi-lateral mode operation; self-aligned single-lateral-mode waveguide diode ring lasers; semiconductor ring lasers; shallow etched waveguide; single-lateral-mode ring lasers; waveguide etching; waveguide laser fabrication; Chemical lasers; Diodes; Etching; Laser modes; Lithography; Optical waveguides; Ring lasers; Semiconductor lasers; Semiconductor waveguides; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7803-1263-5
  • Type

    conf

  • DOI
    10.1109/LEOS.1993.379342
  • Filename
    379342