DocumentCode
2483331
Title
Self-aligned single-lateral-mode waveguide diode ring lasers
Author
Liang, James J. ; Ballantyne, Joseph M.
Author_Institution
Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA
fYear
1993
fDate
15-18 Nov 1993
Firstpage
621
Lastpage
622
Abstract
The majority of semiconductor ring lasers reported to date, have been formed by etching the waveguide through the entire active region, which results in multi-lateral mode operation. In order to make single-lateral-mode ring lasers with etched facets, the waveguide and the facet have to be etched separately, with the facet deep etched, but the waveguide shallow etched
Keywords
etching; laser modes; optical fabrication; quantum well lasers; ring lasers; waveguide lasers; deep etched facet; entire active region; etched facets; multi-lateral mode operation; self-aligned single-lateral-mode waveguide diode ring lasers; semiconductor ring lasers; shallow etched waveguide; single-lateral-mode ring lasers; waveguide etching; waveguide laser fabrication; Chemical lasers; Diodes; Etching; Laser modes; Lithography; Optical waveguides; Ring lasers; Semiconductor lasers; Semiconductor waveguides; Waveguide lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location
San Jose, CA
Print_ISBN
0-7803-1263-5
Type
conf
DOI
10.1109/LEOS.1993.379342
Filename
379342
Link To Document