Title :
Sub-mA-threshold HEMT-compatible diode lasers
Author :
Eliason, G.W. ; Plant, T.K.
Abstract :
This paper presents results on the theory and performance of a new AlGaAs GRIN HEMT-compatible diode laser structure using MBE growth with plane-selective doping. In this unique new device family, growth of pn junctions between 2-D electron/hole gases allows structures with a HEMT driver as an integral part of the device. The extremely small junction capacitance, high mobility lasers should have wide bandwidth for optical interconnections on chips or for optical communication sources
Keywords :
Bandwidth; Capacitance; Charge carrier processes; Diode lasers; Doping; Gas lasers; Gases; HEMTs; Optical interconnections; Ultraviolet sources;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379346
