DocumentCode
2483402
Title
Sub-mA-threshold HEMT-compatible diode lasers
Author
Eliason, G.W. ; Plant, T.K.
fYear
1993
fDate
15-18 Nov 1993
Firstpage
629
Lastpage
630
Abstract
This paper presents results on the theory and performance of a new AlGaAs GRIN HEMT-compatible diode laser structure using MBE growth with plane-selective doping. In this unique new device family, growth of pn junctions between 2-D electron/hole gases allows structures with a HEMT driver as an integral part of the device. The extremely small junction capacitance, high mobility lasers should have wide bandwidth for optical interconnections on chips or for optical communication sources
Keywords
Bandwidth; Capacitance; Charge carrier processes; Diode lasers; Doping; Gas lasers; Gases; HEMTs; Optical interconnections; Ultraviolet sources;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location
San Jose, CA
Print_ISBN
0-7803-1263-5
Type
conf
DOI
10.1109/LEOS.1993.379346
Filename
379346
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