Latch-up test measurement for long duration space missions

Long duration space missions require extremely high reliable components that must guarantee components functionality without incurring in damaging effects. When Integrated Circuits (ICs) are considered, radiation hardened technology should be mandatorily adopted, since it allows to adequately protect against Single Event Latchup (SEL). In this paper we present a complete test measurement experimental setup in order to measure the SEL occurrences at high temperature conditions. The SEL test setup and the executed experiments are described. The experimental environment has been used to test SEL effects in Gate Arrays MG2 Radiation Hardened technology with respect to strike of heavy ions. We performed a complete radiation test at GANIL radiation facility, executed at high temperature by monitoring current absorption and analyzing the functionality of the MSDRX ASIC core. Experimental results show that a drastic improvement of the device SEL sensitivity is observed for high power supply voltages.