Crystal growth and properties of column-III nitrides for short wavelength light emitters

Author

Akasaki, I. ; Amano, H.

Author_Institution

Dept. of Electr. & Electron. Eng., Meijo Univ., Nagoya, Japan

fYear

1993

fDate

15-18 Nov 1993

Firstpage

652

Lastpage

653

Abstract

Summary form only. Aluminum nitride (AlN), gallium nitride (GaN), indium nitride (InN) and their alloys AlGaInN, the so called column-III nitrides are promising candidates as the material for fabrication of very short wavelength light emitters in the blue to near ultraviolet region, because they have direct transition type band structure with the bandgap energy ranging from 1.9 eV to 6.2 eV at room temperature (RT)

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; light emitting diodes; optical fabrication; semiconductor growth; vapour phase epitaxial growth; 1.9 to 6.2 eV; AlGaIn; AlGaInN; AlN; GaN; InN; aluminum nitride; bandgap energy; column-III nitrides; crystal growth; direct transition type band structure; fabrication; gallium nitride; indium nitride; near ultraviolet region; room temperature; short wavelength light emitters; very short wavelength light emitters; Aluminum alloys; Aluminum gallium nitride; Aluminum nitride; Crystalline materials; Fabrication; Gallium alloys; Gallium nitride; III-V semiconductor materials; Indium; Light emitting diodes;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE

Conference_Location

San Jose, CA

Print_ISBN

0-7803-1263-5

Type

conf

DOI

10.1109/LEOS.1993.379358

Filename

379358