Title :
Thermal resistance of top-surface-emitting vertical-cavity diode lasers and monolithic two-dimensional arrays
Author :
Osinski, Marek ; Nakwaski, Wlodzimierz ; Leal, Antonio
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM, USA
Abstract :
We have obtained analogous design curves for 1.55-μm InGaAsP/InP VCSELs. Our results indicate that in spite of a larger thickness of long-wavelength VCSELs, their thermal resistance is actually lower than for GaAs/AlGaAs system. Thus, continuing difficulties with achieving the room temperature cw operation of long-wavelength VCSELs are not caused by a high thermal resistance but by their intrinsic properties
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; laser cavity resonators; optical design techniques; semiconductor laser arrays; semiconductor lasers; surface emitting lasers; thermal resistance; 1.55 mum; InGaAsP-InP; InGaAsP/InP VCSELs; analogous design curves; high thermal resistance; intrinsic properties; laser arrays; long-wavelength VCSELs; monolithic two-dimensional arrays; room temperature cw operation; smart pixels; thermal resistance; top-surface-emitting vertical-cavity diode lasers; Diode lasers; Gallium arsenide; Heat pumps; Mirrors; Power generation; Resistance heating; Semiconductor laser arrays; Temperature; Thermal resistance; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379362
