Title :
Electroabsorption in ultranarrow-barrier GaAs/AlAs multiple quantum well modulators
Author :
Goossen, K.W. ; Cunningham, J.E. ; Jan, W.Y.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
Summary form only given. In conclusion although we observe the QCSE in GaAs/AlAs MQW modulators for barriers as thin as 10 Å, optimum electroabsorption for smart pixels is found for 20-30 Å barrier width
Keywords :
III-V semiconductors; absorption coefficients; aluminium compounds; electro-optical modulation; electroabsorption; excitons; gallium arsenide; quantum confined Stark effect; semiconductor quantum wells; smart pixels; 10 A; 20 to 30 A; GaAs-AlAs; GaAs/AlAs MQW modulators; GaAs/AlAs multiple quantum well modulators; QCSE; barrier width; electroabsorption; optimum electroabsorption; smart pixels; ultranarrow-barrier; Absorption; Excitons; Gallium arsenide; Logic arrays; Optical arrays; Optical modulation; Optical saturation; Potential well; Quantum well devices; Smart pixels;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379363
