Title :
SEED smart pixel devices
Author :
Lentine, Anthony L.
Author_Institution :
AT&T Bell Labs., Naperville, IL, USA
Abstract :
Presents research into NOR/NAND gate smart pixels based on quantum well FET-SEED devices such as GaAs-AlGaAs MQW diode modulators/photodetectors
Keywords :
III-V semiconductors; SEEDs; aluminium compounds; field effect integrated circuits; gallium arsenide; integrated optoelectronics; large scale integration; optical logic; p-i-n photodiodes; photodetectors; semiconductor quantum wells; smart pixels; GaAs-AlGaAs; GaAs-AlGaAs MQW diode modulators; NAND gate smart pixels; NOR gate smart pixels; SEED smart pixel devices; photodetector; quantum well FET-SEED devices; Circuits; Electrons; FETs; Gallium arsenide; Optical modulation; Optical receivers; P-i-n diodes; Quantum well devices; Semiconductor diodes; Smart pixels;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379365
