• DocumentCode
    2483725
  • Title

    SEED smart pixel devices

  • Author

    Lentine, Anthony L.

  • Author_Institution
    AT&T Bell Labs., Naperville, IL, USA
  • fYear
    1993
  • fDate
    15-18 Nov 1993
  • Firstpage
    666
  • Lastpage
    667
  • Abstract
    Presents research into NOR/NAND gate smart pixels based on quantum well FET-SEED devices such as GaAs-AlGaAs MQW diode modulators/photodetectors
  • Keywords
    III-V semiconductors; SEEDs; aluminium compounds; field effect integrated circuits; gallium arsenide; integrated optoelectronics; large scale integration; optical logic; p-i-n photodiodes; photodetectors; semiconductor quantum wells; smart pixels; GaAs-AlGaAs; GaAs-AlGaAs MQW diode modulators; NAND gate smart pixels; NOR gate smart pixels; SEED smart pixel devices; photodetector; quantum well FET-SEED devices; Circuits; Electrons; FETs; Gallium arsenide; Optical modulation; Optical receivers; P-i-n diodes; Quantum well devices; Semiconductor diodes; Smart pixels;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    0-7803-1263-5
  • Type

    conf

  • DOI
    10.1109/LEOS.1993.379365
  • Filename
    379365
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2483725