Title :
Influence of the Schottky pad in semi-insulating GaAs on the Schottky barrier in the active layer
Author :
Wu, J. ; Wang, Z.G. ; Zhang, M. ; Fan, T.W. ; Lin, L.Y.
Author_Institution :
Inst. of Semicond., Acad. Sinica, Beijing, China
fDate :
29 Apr-3 May 1996
Abstract :
It is observed that the sidegate voltage has an influence on the gate barrier of FETs and the behavior of leakage current in substrates via the gate metal pad lying on the semi-insulating GaAs substrate. A simple mechanism is proposed to interpret the observation
Keywords :
III-V semiconductors; Schottky barriers; Schottky gate field effect transistors; crosstalk; gallium arsenide; leakage currents; GaAs; MESFET; Schottky barrier; Schottky pad; active layer; crosstalk; gate barrier; gate metal pad; leakage current; semi-insulating GaAs; sidegate voltage; Atherosclerosis; Capacitance; Capacitance-voltage characteristics; FETs; Gallium arsenide; Leakage current; Schottky barriers; Space charge; Substrates; Voltage;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.571117
