DocumentCode
2483741
Title
Influence of the Schottky pad in semi-insulating GaAs on the Schottky barrier in the active layer
Author
Wu, J. ; Wang, Z.G. ; Zhang, M. ; Fan, T.W. ; Lin, L.Y.
Author_Institution
Inst. of Semicond., Acad. Sinica, Beijing, China
fYear
1996
fDate
29 Apr-3 May 1996
Firstpage
349
Lastpage
352
Abstract
It is observed that the sidegate voltage has an influence on the gate barrier of FETs and the behavior of leakage current in substrates via the gate metal pad lying on the semi-insulating GaAs substrate. A simple mechanism is proposed to interpret the observation
Keywords
III-V semiconductors; Schottky barriers; Schottky gate field effect transistors; crosstalk; gallium arsenide; leakage currents; GaAs; MESFET; Schottky barrier; Schottky pad; active layer; crosstalk; gate barrier; gate metal pad; leakage current; semi-insulating GaAs; sidegate voltage; Atherosclerosis; Capacitance; Capacitance-voltage characteristics; FETs; Gallium arsenide; Leakage current; Schottky barriers; Space charge; Substrates; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location
Toulouse
Print_ISBN
0-7803-3179-6
Type
conf
DOI
10.1109/SIM.1996.571117
Filename
571117
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