DocumentCode
2483743
Title
VSTEP pixels for optical interconnection and switching
Author
Kasahara, K. ; Kosaka, H. ; Numai, T.
Author_Institution
Opto-Electron. Res. Labs., NEC Corp., Tsukuba, Japan
fYear
1993
fDate
15-18 Nov 1993
Firstpage
668
Lastpage
669
Abstract
Presents InGaAs strained QW photoabsorption layer pnpn vertical cavity vertical to surface transmission electro photonic device applications in optical interconnections and switiching
Keywords
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical interconnections; optical switches; semiconductor quantum wells; semiconductor switches; smart pixels; InGaAs; InGaAs strained QW photoabsorption layer; VSTEP pixels; optical interconnection; optical switching; smart pixels; vertical cavity; vertical to surface transmission electro photonic device; Bandwidth; Distributed Bragg reflectors; Gallium arsenide; Nonlinear optics; Optical interconnections; Optical noise; Production; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location
San Jose, CA
Print_ISBN
0-7803-1263-5
Type
conf
DOI
10.1109/LEOS.1993.379366
Filename
379366
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