Title :
VSTEP pixels for optical interconnection and switching
Author :
Kasahara, K. ; Kosaka, H. ; Numai, T.
Author_Institution :
Opto-Electron. Res. Labs., NEC Corp., Tsukuba, Japan
Abstract :
Presents InGaAs strained QW photoabsorption layer pnpn vertical cavity vertical to surface transmission electro photonic device applications in optical interconnections and switiching
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; optical interconnections; optical switches; semiconductor quantum wells; semiconductor switches; smart pixels; InGaAs; InGaAs strained QW photoabsorption layer; VSTEP pixels; optical interconnection; optical switching; smart pixels; vertical cavity; vertical to surface transmission electro photonic device; Bandwidth; Distributed Bragg reflectors; Gallium arsenide; Nonlinear optics; Optical interconnections; Optical noise; Production; Stimulated emission; Surface emitting lasers; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379366
