GaAs optoelectronic smart pixel arrays

Author

Hibbs-Brenner, M.K. ; Mukherjee, S.D. ; Grung, B.L. ; Skogen, J.

Author_Institution

Syst. & Res. Center, Honeywell Inc., Bloomington, MN, USA

fYear

1993

fDate

15-18 Nov 1993

Firstpage

672

Lastpage

673

Abstract

In summary, our long term directions will involve the monolithic integration of vertical cavity surface emitting lasers (VCSELs), either p-i-n or photoconducting detectors, and the complementary heterostructure field effect transistor LC technology. An approach to the monolithic integration of these structures is illustrated

Keywords

III-V semiconductors; field effect integrated circuits; gallium arsenide; integrated optoelectronics; laser cavity resonators; liquid crystal devices; optical interconnections; p-i-n photodiodes; photoconducting devices; photodetectors; semiconductor lasers; smart pixels; surface emitting lasers; GaAs optoelectronic smart pixel arrays; VCSELs; complementary heterostructure field effect transistor LC technology; monolithic integration; p-i-n detectors; photoconducting detectors; vertical cavity surface emitting lasers; Detectors; Gallium arsenide; Integrated circuit technology; Monolithic integrated circuits; Optoelectronic devices; Packaging; Photodetectors; Power dissipation; Smart pixels; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE

Conference_Location

San Jose, CA

Print_ISBN

0-7803-1263-5

Type

conf

DOI

10.1109/LEOS.1993.379368

Filename

379368