Title :
Effect of Gate Finger on Double-Gate MOSFET for RF Switch at 45-nm Technology
Author :
Srivastava, Viranjay M. ; Singh, G. ; Yadav, K.S.
Author_Institution :
Dept. of Electron. & Commun. Eng., Jaypee Univ. of Inf. Technol., Solan, India
Abstract :
In this paper, an independently controlled symmetrical double-gate MOSFET is analyzed, which is used for the double-pole four-throw RF CMOS switch design. This analysis emphasizes on the study of the effect of number of gate finger and their layouts for the double-gate MOSFET at 45-nm technology. This is in terms of supply voltage, gate voltage, drain current, and voltage gain. Higher drain current can be easily achieved by using higher number of gate finger which are also analyzed.
Keywords :
MOSFET; field effect transistor switches; double-gate MOSFET layout; double-pole four-throw RF CMOS switch design; drain current; gate finger effect; gate voltage; independently controlled symmetrical double-gate MOSFET; size 45 nm; supply voltage; voltage gain; CMOS integrated circuits; Fingers; Logic gates; MOSFET circuits; Radio frequency; Switches; Switching circuits; 45-nm technology; CMOS; Double-gate MOSFET; Gate finger; RF switch; Radio frequency; VLSI;
Conference_Titel :
Communication Systems and Network Technologies (CSNT), 2011 International Conference on
Conference_Location :
Katra, Jammu
Print_ISBN :
978-1-4577-0543-4
Electronic_ISBN :
978-0-7695-4437-3
DOI :
10.1109/CSNT.2011.101
