Title :
Effects of semi-insulating substrate on kink phenomena in GaAs MESFETs
Author :
Horio, K. ; Satoh, K.
Author_Institution :
Fac. of Syst. Eng., Shibaura Inst. of Technol., Tokyo, Japan
fDate :
29 Apr-3 May 1996
Abstract :
Two-dimensional simulation of GaAs MESFETs with perfectly insulating substrate is made, and the results are compared with those for a case with more realistic semi-insulating substrate into which carriers call be injected. It is shown that the kink or sub-breakdown is explained by impact ionization of holes and the following hole trapping or hole accumulation in the semi-insulating substrate rather than by direct gate breakdown
Keywords :
III-V semiconductors; Schottky gate field effect transistors; deep levels; gallium arsenide; hole traps; impact ionisation; semiconductor device models; 2D simulation; GaAs; GaAs MESFETs; hole accumulation; hole trapping; impact ionization; kink phenomena; semi-insulating substrate; sub-breakdown; Charge carrier processes; Electric breakdown; Gallium arsenide; Impact ionization; Insulation; MESFET integrated circuits; Modeling; Poisson equations; Systems engineering and theory; Voltage;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.571118
