Title :
Combined empirical and look-up table approach for non-quasi-static modelling of GaN HEMTs
Author :
Crupi, Giovanni ; Schreurs, Dominique ; Caddemi, Alina ; Angelov, Iltcho ; Liu, Rui ; Germain, Marianne ; De Raedt, Walter
Author_Institution :
Dipt. di Fis. della Materia e Ing. Elettron., Univ. of Messina, Messina, Italy
Abstract :
In this paper the empirical and the look-up table approaches are combined to accurately model a gallium nitride based HEMT on silicon carbide. That solution allows to exploit the advantages of both approaches. The validity of the extracted model is verified by comparing model simulations with DC and microwave measurements.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; microwave measurement; semiconductor device models; table lookup; wide band gap semiconductors; DC measurements; GaN; HEMT; SiC; empirical approach; high electron mobility transistor; look-up table; microwave measurements; nonquasistatic modelling; Circuits; Frequency; Gallium nitride; HEMTs; MODFETs; Microwave devices; Microwave technology; Silicon carbide; Substrates; Table lookup; Empirical model; HEMT; Look-up table model; Semiconductor device modelling;
Conference_Titel :
Telecommunication in Modern Satellite, Cable, and Broadcasting Services, 2009. TELSIKS '09. 9th International Conference on
Conference_Location :
Nis
Print_ISBN :
978-1-4244-4382-6
Electronic_ISBN :
978-1-4244-4383-3
DOI :
10.1109/TELSKS.2009.5339496
