Combined empirical and look-up table approach for non-quasi-static modelling of GaN HEMTs

Author

Crupi, Giovanni ; Schreurs, Dominique ; Caddemi, Alina ; Angelov, Iltcho ; Liu, Rui ; Germain, Marianne ; De Raedt, Walter

Author_Institution

Dipt. di Fis. della Materia e Ing. Elettron., Univ. of Messina, Messina, Italy

fYear

2009

fDate

7-9 Oct. 2009

Firstpage

40

Lastpage

43

Abstract

In this paper the empirical and the look-up table approaches are combined to accurately model a gallium nitride based HEMT on silicon carbide. That solution allows to exploit the advantages of both approaches. The validity of the extracted model is verified by comparing model simulations with DC and microwave measurements.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; microwave measurement; semiconductor device models; table lookup; wide band gap semiconductors; DC measurements; GaN; HEMT; SiC; empirical approach; high electron mobility transistor; look-up table; microwave measurements; nonquasistatic modelling; Circuits; Frequency; Gallium nitride; HEMTs; MODFETs; Microwave devices; Microwave technology; Silicon carbide; Substrates; Table lookup; Empirical model; HEMT; Look-up table model; Semiconductor device modelling;

fLanguage

English

Publisher

ieee

Conference_Titel

Telecommunication in Modern Satellite, Cable, and Broadcasting Services, 2009. TELSIKS '09. 9th International Conference on

Conference_Location

Nis

Print_ISBN

978-1-4244-4382-6

Electronic_ISBN

978-1-4244-4383-3

Type

conf

DOI

10.1109/TELSKS.2009.5339496

Filename

5339496