Advantages of bipolar SiGe over silicon CMOS for a 2.1 GHz LNA

Author

Logan, Nandi ; Noras, James M.

fYear

2009

fDate

7-9 Oct. 2009

Firstpage

29

Lastpage

31

Abstract

A comparison is made between a Silicon Germanium (SiGe) bipolar transistor LNA and a Silicon (Si) Complementary Metal Oxide Semiconductor (CMOS) transistor Low Noise Amplifier (LNA), both operating at 2.1 GHz, a typical application being a Universal Mobile Telecommunications System (UMTS) cellular mobile phone. The designs are based on a simple common source (CS) amplifier design, and matched with a combine shunt feedback and resonance matching techniques. The SiGe bipolar design achieves better gain and NF, with significantly lower current consumption.

Keywords

3G mobile communication; CMOS integrated circuits; Ge-Si alloys; UHF amplifiers; UHF integrated circuits; bipolar transistors; elemental semiconductors; feedback; low noise amplifiers; mobile handsets; silicon; LNA; Si; SiGe; bipolar transistor; cellular mobile phone; common source amplifier; complementary metal oxide semiconductor transistor; current consumption; frequency 2.1 GHz; gain; low noise amplifier; shunt feedback matching; shunt resonance matching; universal mobile telecommunications system; 3G mobile communication; Bipolar transistors; Feedback; Germanium silicon alloys; Low-noise amplifiers; Mobile handsets; Resonance; Semiconductor device noise; Semiconductor optical amplifiers; Silicon germanium; CMOS; LNA; Shunt Feedback; SiGe; UMTS; bipolar;

fLanguage

English

Publisher

ieee

Conference_Titel

Telecommunication in Modern Satellite, Cable, and Broadcasting Services, 2009. TELSIKS '09. 9th International Conference on

Conference_Location

Nis

Print_ISBN

978-1-4244-4382-6

Electronic_ISBN

978-1-4244-4383-3

Type

conf

DOI

10.1109/TELSKS.2009.5339497

Filename

5339497