DocumentCode :
2484280
Title :
Progress in high power diode arrays
Author :
Scifres, D. ; Endriz, J. ; Mundinger, D. ; Haden, J. ; Welch, D. ; Mehuys, D. ; Sakamoto, M. ; Lang, R. ; Craig, R. ; Harnagel, G.
Author_Institution :
SDL Inc., San Jose, CA, USA
fYear :
1993
fDate :
15-18 Nov 1993
Firstpage :
719
Lastpage :
721
Abstract :
Recent progress in high power diode arrays include higher power output levels (>100 W/cm), higher efficiency (>50%), longer lifetimes (1011 shots QCW, 10000 hrs CW), high temperature operation (>70°C), and expanded wavelength coverage (670 nm to 2.0 μm). In addition to advances in device performance, new package designs have been developed which provide for higher average power capability and optical systems have been developed to reformat the output in ways that are more convenient for many practical applications
Keywords :
life testing; optical pumping; optical testing; semiconductor device testing; semiconductor laser arrays; semiconductor lasers; 10000 h; 50 percent; 670 nm to 2 mum; 70 C; device performance; expanded wavelength coverage; high power diode arrays; high temperature operation; higher average power capability; higher efficiency; higher power output levels; longer lifetimes; optical systems; package designs; practical applications; Bars; Diodes; Laser excitation; Lenses; Microoptics; Optical design; Optical pumping; Packaging; Solid lasers; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
Type :
conf
DOI :
10.1109/LEOS.1993.379392
Filename :
379392
Link To Document :
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