Title :
Progress in mid-infrared diode lasers
Author :
Choi, H.K. ; Turner, G.W. ; Walpole, J.N. ; Eglash, S.J.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
Abstract :
Mid-infrared diode lasers (λ=1.7-5 μm) fabricated from GaInAsSb/AlGaAsSb heterostructures grown on GaSb substrates have been under development at Lincoln Laboratory for the past five years. Performance breakthroughs have been achieved by employing strained multiple-quantum-well active regions, and cw output power as high as 1.3 W has been obtained at room temperature near 2 μm. These lasers, either employed as direct sources or for pumping of solid state lasers, can be used for a variety of applications exploiting the characteristics of this spectral range, which is eyesafe and includes important atmospheric transmission bands and molecular absorption lines
Keywords :
III-V semiconductors; aluminium compounds; epitaxial growth; gallium arsenide; gallium compounds; indium compounds; infrared sources; optical fabrication; quantum well lasers; semiconductor growth; 1.3 W; 1.7 to 5 mum; 2 mum; GaInAsSb-AlGaAsSb; GaInAsSb/AlGaAsSb heterostructures; GaSb; GaSb substrates; Lincoln Laboratory; atmospheric transmission bands; cw output power; eyesafe; mid-infrared diode lasers; molecular absorption lines; room temperature; solid state lasers; spectral range; strained multiple-quantum-well active regions; Absorption; Diode lasers; Gas lasers; Laboratories; Laser excitation; Power generation; Pump lasers; Quantum well devices; Solid lasers; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379393
