Title :
Growth of multilayered epitaxial films by pulsed excimer laser ablation
Author :
Lowndes, Douglas H.
Author_Institution :
Div. of Solid State, Oak Ridge Nat. Lab., TN, USA
Abstract :
The characteristics of pulsed laser ablation for epitaxial film growth are reviewed. New developments in the growth of heteroepitaxial multilayers, stabilization of metastable phases, and growth of semiconductor alloys with continuously variable composition, are described
Keywords :
pulsed laser deposition; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; composition; epitaxial film growth; heteroepitaxial multilayers; metastable phases; pulsed excimer laser ablation; semiconductor alloys; Laser ablation; Laser beams; Optical pulses; Plasma density; Plasma materials processing; Plasma temperature; Programmable logic arrays; Pulsed laser deposition; Semiconductor lasers; Substrates;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379419
