Title :
An analytical characterization for IMODFETs
Author :
Liu, Kuo-Wei ; Anwar, A.F.M.
Author_Institution :
Mingchuan Univ., Taipei, Taiwan
fDate :
29 Apr-3 May 1996
Abstract :
A model to calculate the small-signal parameters of GaAs/AlGaAs inverted MODFET (I-MODFET) is presented. The model is based on a self-consistent solution of the Schroedinger and Poisson´s equations. A non-linear velocity-electric field (Vd-E) characteristic is used to evaluate the small-signal parameters for this class of devices. These include the transconductance gm, the drain resistance r d, the gate-source capacitance Cgs and the unity current gain cut-off frequency fT. The analytical results are compared with the experimental data and show excellent agreement
Keywords :
III-V semiconductors; Schrodinger equation; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor device models; Poisson´s equations; Schroedinger equation; drain resistance; gate-source capacitance; inverted MODFET; self-consistent solution; small-signal parameters; transconductance; unity current gain cut-off frequency; Capacitance; Cutoff frequency; Gallium arsenide; HEMTs; MODFETs; Ohmic contacts; Poisson equations; Surface resistance; Systems engineering and theory; Transconductance;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.571122
