An analytical characterization for IMODFETs

Author

Liu, Kuo-Wei ; Anwar, A.F.M.

Author_Institution

Mingchuan Univ., Taipei, Taiwan

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

371

Lastpage

375

Abstract

A model to calculate the small-signal parameters of GaAs/AlGaAs inverted MODFET (I-MODFET) is presented. The model is based on a self-consistent solution of the Schroedinger and Poisson´s equations. A non-linear velocity-electric field (V_d-E) characteristic is used to evaluate the small-signal parameters for this class of devices. These include the transconductance g_m, the drain resistance r _d, the gate-source capacitance C_gs and the unity current gain cut-off frequency f_T. The analytical results are compared with the experimental data and show excellent agreement

Keywords

III-V semiconductors; Schrodinger equation; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor device models; Poisson´s equations; Schroedinger equation; drain resistance; gate-source capacitance; inverted MODFET; self-consistent solution; small-signal parameters; transconductance; unity current gain cut-off frequency; Capacitance; Cutoff frequency; Gallium arsenide; HEMTs; MODFETs; Ohmic contacts; Poisson equations; Surface resistance; Systems engineering and theory; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.571122

Filename

571122