DocumentCode
2485104
Title
Overshoot dynamics in GaAs observed using THz radiation
Author
Norris, Theodore B. ; Son, J.
Author_Institution
Michigan Univ., Ann Arbor, MI, USA
fYear
1993
fDate
15-18 Nov 1993
Firstpage
810
Abstract
Summary form only given. THz electromagnetic radiation emitted by accelerating electrons is used as to probe the transport dynamics of carriers in semiconductor devices. Velocity overshoot is directly observed in GaAs up to extremely high fields (200 kV/cm)
Keywords
III-V semiconductors; gallium arsenide; high field effects; GaAs; THz electromagnetic radiation emission; accelerating electrons; carrier transport dynamics; high fields; semiconductor device; velocity overshoot; Electron emission; Gallium arsenide; Probes; Semiconductor devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location
San Jose, CA
Print_ISBN
0-7803-1263-5
Type
conf
DOI
10.1109/LEOS.1993.379440
Filename
379440
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