Title :
Ultrafast quantum well optoelectronics
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
Abstract :
Summary form only given. Quantum wells exhibit ultrafast optoelectronic response (~150 fs or less), low dispersion propagation, and provide spatio-temporal internal field mapping. We review experiments illustrating these points, and discuss developments in high speed quantum well optoelectronic devices
Keywords :
electroabsorption; excitons; high-speed optical techniques; optical dispersion; optoelectronic devices; semiconductor quantum wells; 150 fs; high speed quantum well optoelectronic devices; low dispersion propagation; review; spatio-temporal internal field mapping; ultrafast optoelectronic response; ultrafast quantum well optoelectronics; Absorption; Dielectric thin films; Etching; Optical arrays; Optical devices; Optical propagation; Optoelectronic devices; Temperature; Ultrafast electronics; Ultrafast optics;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1993. LEOS '93 Conference Proceedings. IEEE
Conference_Location :
San Jose, CA
Print_ISBN :
0-7803-1263-5
DOI :
10.1109/LEOS.1993.379443
