DocumentCode :
2488166
Title :
Current testing procedure for deep submicron devices
Author :
Chichkov, Anton ; Merlier, Dirk ; Cox, Peter
Author_Institution :
Alcatel Microelectron., Oudenaarde, Belgium
fYear :
2000
fDate :
2000
Firstpage :
91
Lastpage :
96
Abstract :
This paper presents a test technique that employs two different supply voltages for the same IDDQ pattern. The results of the two measurements are subtracted in order to eliminate the inherent subthreshold leakage. Summary of the experiment carried out on a “System on a Chip” (SOC) device build in 0.35 μm technology is also shown. The experiments proved that the method is effective in detecting failures not detectable with the single limit I DDQ
Keywords :
automatic testing; electric current measurement; fault diagnosis; integrated circuit testing; leakage currents; IDDQ pattern; SoC device; cumulative probability distribution; current testing procedure; deep submicron devices; different supply voltages; differential current measurement; subthreshold leakage elimination; CMOS technology; Circuit faults; Circuit testing; Current measurement; Failure analysis; Integrated circuit testing; Leakage current; Microelectronics; Stress; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Test Workshop, 2000. Proceedings. IEEE European
Conference_Location :
Cascais
ISSN :
1530-1877
Print_ISBN :
0-7695-0701-8
Type :
conf
DOI :
10.1109/ETW.2000.873784
Filename :
873784
Link To Document :
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