A 5mW limiting amplifier with 52dB gain for Gbps wireless communication

Author

Ying, Yutong ; Huang, Lu ; Cai, Li ; Lin, Fujiang

Author_Institution

Dept. o f Electron. Sci. & Technol., USTC, Hefei, China

Volume

1

fYear

2012

fDate

5-8 May 2012

Firstpage

1

Lastpage

4

Abstract

This paper presents a low power and high gain limiting amplifier for Gbps wireless communication system in 0.18μm CMOS technology. It incorporates negative active inductor, negative resistance and negative capacitance to boost gain and bandwidth. Drawing 2.8mA from 1.8V supply, the limiting amplifier achieves 1.25Gbps data rate and 52dB differential gain. The chip is fully integrated, which occupies 0.094mm² including on-chip DC offset correction circuit.

Keywords

CMOS analogue integrated circuits; inductors; limiters; low noise amplifiers; low-power electronics; radiocommunication; CMOS technology; bit rate 1.25 Gbit/s; current 2.8 mA; gain 52 dB; high gain limiting amplifier; low power amplifier; negative active inductor; negative capacitance; negative resistance; on-chip DC offset correction circuit; power 5 mW; size 0.18 mum; voltage 1.8 V; wireless communication system; Active inductors; Bandwidth; CMOS integrated circuits; Capacitors; Limiting; Resistance; Wireless communication; Limiting amplifier; active inductor; negative capacitance; negative resistance; wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on

Conference_Location

Shenzhen

Print_ISBN

978-1-4673-2184-6

Type

conf

DOI

10.1109/ICMMT.2012.6229899

Filename

6229899