DocumentCode
2488387
Title
Research on thermal-electrical characteristics of SiGe HBTs with different Ge profiles
Author
Zhang, Yujie ; Zhang, Wanrong ; Jin, Dongyue ; Xie, Hongyun ; Guo, Zhenjie ; Xing, Guanghui ; Lu, Zhiyi
Author_Institution
Coll. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China
Volume
1
fYear
2012
fDate
5-8 May 2012
Firstpage
1
Lastpage
4
Abstract
The thermal-electrical characteristics of SiGe HBTs with three kinds of Ge profiles (box, trapezoidal and triangular) in the base are investigated in this paper. The results show that SiGe HBTs with trapezoidal and triangular Ge-profile could improve the peak temperature, non-uniformity of surface temperature distribution, and the sensibility of the gain and cutoff frequency to temperature compared with SiGe HBT with box Ge profile. However, these properties of SiGe HBT with triangular Ge profile are superior to that of trapezoidal Ge profile.
Keywords
Ge-Si alloys; heterojunction bipolar transistors; semiconductor materials; temperature distribution; thermal analysis; HBT; SiGe; cutoff frequency; surface temperature distribution nonuniformity; thermal-electrical characteristics; trapezoidal germanium-profile; triangular germanium-profile;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on
Conference_Location
Shenzhen
Print_ISBN
978-1-4673-2184-6
Type
conf
DOI
10.1109/ICMMT.2012.6229903
Filename
6229903
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