High-gain silicon based on-chip dielectric resonator antenna at 60GHz

Author

Gao, Yang ; Feng, Zhenghe ; Zhang, Li

Author_Institution

Dept. of Electron. Eng., Tsinghua Univ., Beijing, China

Volume

1

fYear

2012

fDate

5-8 May 2012

Firstpage

1

Lastpage

4

Abstract

A high-gain silicon based on-chip dielectric resonator antenna operating at 60GHz that can be fabricated with standard CMOS technology is proposed. Both the dominant mode and one high-order mode are excited in the rectangular DRA realizing broadband characteristic. The simulated impedance bandwidth is about 17.3% (54.9-65.3GHz), covering the 7GHz band license-free around 60GHz. The proposed antenna also achieved a gain of over 0dBi from 56.8 to 65.3GHz, meeting fundamental requirement in the entire 60GHz frequency band. The peak gain at 60GHz and two resonant nulls are 3.7, 3.3 and 1.6dBi, respectively. Since only the top metal layer is utilized in the structure, the proposed antenna is easy to design and fabricate.

Keywords

CMOS integrated circuits; dielectric resonator antennas; elemental semiconductors; field effect MIMIC; millimetre wave antennas; silicon; Si; dominant mode; frequency 56.8 GHz to 65.3 GHz; high-gain silicon; high-order mode; on-chip dielectric resonator antenna; rectangular DRA; standard CMOS technology; top metal layer; Bandwidth; Dielectric resonator antennas; Gain; Resonant frequency; Silicon; System-on-a-chip;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on

Conference_Location

Shenzhen

Print_ISBN

978-1-4673-2184-6

Type

conf

DOI

10.1109/ICMMT.2012.6229931

Filename

6229931