A 0.7–9GHz CMOS broadband high-gain low noise amplifier for multi-band use

This paper presents the design and analysis of a 0.79GHz CMOS Broadband High-Gain Low Noise Amplifier for Multi-Band Use. The proposed LNA is based on self-biased resistive-feedback topology. The broadband LNA adopts shunt-peaking inductor and an inductor inside the feedback loop to extend the bandwidth. Shunt-peaking inductor with a PMOSFET or a resistance is chosen as the load to boost the gain while maintaining low NF at high frequencies. Two diodes are added to protect the gate of the input device from electro-static discharge (ESD). The LNA is fabricated in SMIC 0.13-μm process. From 0.7 to 9GHz, the measured results show high-gain of 24.6 to 28.3 dB, noise figure of 2.67 to 3.38dB with Input-referred third-order intercept point (IIP3) of -11dBm while consuming 17.8mA from a 1.2V supply.