Applying a submicron mismatch model to practical IC design

Author

Guardiani, Carlo ; Tomasini, Alfredo ; Benkoski, Jacques ; Quarantelli, Michele ; Gubian, Paolo

Author_Institution

SGS-Thomson Microelectron., Agrate Brianza, Italy

fYear

1994

fDate

1-4 May 1994

Firstpage

297

Lastpage

300

Abstract

A model of the mismatch effect in IC devices is presented that extends the validity of existing models to the sub-micron region. Unlike in previous studies the effect of a finite two dimensional correlation length is taken into account, thus allowing a good reproduction of the differences in device variance that occur for different aspect ratios. The model has been characterized on a 0.75 μ CMOS technology and has been implemented in a powerful CAD system for statistical design analysis, thus being of practical utility for IC designers when making critical design considerations and trade-offs

Keywords

CMOS integrated circuits; circuit CAD; integrated circuit design; integrated circuit modelling; statistical analysis; 0.75 micron; CAD system; CMOS technology; IC design; aspect ratios; device variance; finite two dimensional correlation length; statistical design analysis; submicron mismatch model; submicron region; Analog integrated circuits; Application specific integrated circuits; CMOS technology; Design automation; Integrated circuit modeling; Microelectronics; Power system modeling; Predictive models; Semiconductor device modeling; Stochastic processes;

fLanguage

English

Publisher

ieee

Conference_Titel

Custom Integrated Circuits Conference, 1994., Proceedings of the IEEE 1994

Conference_Location

San Diego, CA

Print_ISBN

0-7803-1886-2

Type

conf

DOI

10.1109/CICC.1994.379715

Filename

379715