A 0.7–6GHz broadband CMOS power amplifier for multi-band applications

Author

Xiaopeng Sun ; Fengyi Huang ; Xusheng Tang ; Mingchi Shao

Author_Institution

Nat. Mobile Commun. Res. Lab., Southeast Univ., Nanjing, China

Volume

1

fYear

2012

fDate

5-8 May 2012

Firstpage

1

Lastpage

4

Abstract

In this paper, a two-stage cascaded power amplifier (PA), which consists of cascode topology, for Multi-band systems operating in the 0.7-6GHz frequency range is presented. The shunt-shunt feedback and shunt peaking is used to improve wideband matching. To achieve sufficient linearity and efficiency, this PA operates in the Class-AB regime. It is designed in SMIC 0.13μm RF CMOS process. The proposed PA provides the following performance: S21 of 22-dB, more than 10-dB input and output return loss, 10.8% maximum power-added-efficiency and 10.65dBm output P1dB with at 3GHz. The PA works under 1.8v supply, the total area of the layout is 1.08×0.83 mm².

Keywords

CMOS analogue integrated circuits; UHF power amplifiers; microwave integrated circuits; microwave power amplifiers; wideband amplifiers; Class-AB regime; SMIC RF CMOS; broadband CMOS power amplifier; cascode topology; frequency 0.7 GHz to 6 GHz; multi-band applications; shunt peaking; shunt-shunt feedback; size 0.13 mum; two-stage cascaded power amplifier; voltage 1.8 V; wideband matching; CMOS integrated circuits; Impedance matching; Layout; Power amplifiers; Radio frequency; Wideband; 1dB compression point; CMOS PA; PAE; power amplifier; shunt-shunt feedback shunt peaking;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on

Conference_Location

Shenzhen

Print_ISBN

978-1-4673-2184-6

Type

conf

DOI

10.1109/ICMMT.2012.6229986

Filename

6229986