Title :
High sensitivity, low power, silicon magnetic field detector
Author :
Doyle, John ; Lyden, Colin
Author_Institution :
Nat. Microelectron. Res. Centre, Univ. Coll. Cork, Ireland
Abstract :
A CMOS magnetic field sensitive oscillator is presented. The device is aimed at a very low power application, where small size is essential. When subjected to a 10 Gauss magnetic field, it registers a 3 Hz change in frequency, which is readily detectable and above the noise floor, while drawing only 100 nA from a 2 V supply. This represents a factor of thirty improvement in sensitivity over previously reported devices and the highest sensitivity/power ratio reported to date for a silicon magnetic field sensor
Keywords :
CMOS analogue integrated circuits; elemental semiconductors; magnetic field measurement; magnetic sensors; silicon; variable-frequency oscillators; 100 nA; 2 V; CMOS magnetic field sensitive oscillator; MAGFET; Si; VFO; high sensitivity detection; low power operation; magnetic field detector; Detectors; Frequency; Gaussian noise; Gaussian processes; Magnetic circuits; Magnetic fields; Magnetic noise; Magnetic sensors; Oscillators; Silicon;
Conference_Titel :
Custom Integrated Circuits Conference, 1994., Proceedings of the IEEE 1994
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-1886-2
DOI :
10.1109/CICC.1994.379720
