Intermodulation Behaviour of a Transient Trapping Model

Author

Zaman, Saif ; Parker, Anthony

Author_Institution

Dept. of Electron., Macquarie Univ., Sydney, NSW

fYear

2006

fDate

19-21 Dec. 2006

Firstpage

29

Lastpage

32

Abstract

Trapping in microwave devices affects the time domain and frequency domain behaviour. In the time domain, surface traps result in the well known gate lag effect. A model, developed to predict these effects in HEMT devices, is used to simulate frequency domain behaviour of trapping in HEMT device. Trapping is known to cause distortion in intermodulation behaviour of the device, that is, a null in the third order intermodulation. The model can predict this intermodulation distortion frequency and its dependence on drain bias

Keywords

high electron mobility transistors; intermodulation distortion; intermodulation measurement; microwave devices; HEMT devices; frequency domain behaviour; gate lag effect; intermodulation behaviour; intermodulation distortion frequency; microwave devices; surface traps; time domain behaviour; transient trapping model; DH-HEMTs; Delay effects; Electron traps; Electronic mail; Frequency domain analysis; HEMTs; Intermodulation distortion; Microwave devices; Predictive models; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 2006. ICECE '06. International Conference on

Conference_Location

Dhaka

Print_ISBN

98432-3814-1

Type

conf

DOI

10.1109/ICECE.2006.355282

Filename

4178400