Title :
Intermodulation Behaviour of a Transient Trapping Model
Author :
Zaman, Saif ; Parker, Anthony
Author_Institution :
Dept. of Electron., Macquarie Univ., Sydney, NSW
Abstract :
Trapping in microwave devices affects the time domain and frequency domain behaviour. In the time domain, surface traps result in the well known gate lag effect. A model, developed to predict these effects in HEMT devices, is used to simulate frequency domain behaviour of trapping in HEMT device. Trapping is known to cause distortion in intermodulation behaviour of the device, that is, a null in the third order intermodulation. The model can predict this intermodulation distortion frequency and its dependence on drain bias
Keywords :
high electron mobility transistors; intermodulation distortion; intermodulation measurement; microwave devices; HEMT devices; frequency domain behaviour; gate lag effect; intermodulation behaviour; intermodulation distortion frequency; microwave devices; surface traps; time domain behaviour; transient trapping model; DH-HEMTs; Delay effects; Electron traps; Electronic mail; Frequency domain analysis; HEMTs; Intermodulation distortion; Microwave devices; Predictive models; Voltage;
Conference_Titel :
Electrical and Computer Engineering, 2006. ICECE '06. International Conference on
Conference_Location :
Dhaka
Print_ISBN :
98432-3814-1
DOI :
10.1109/ICECE.2006.355282
