Title :
Multiplication Noise on Random Free Path Model In Short Avalanche Photodiodes Using The Monte Carlo Simulation
Author_Institution :
Hooghly Eng. & Technol. Coll., West Bengal
Abstract :
The multiplication process is a stochastic event and induces noise as a result of describing random path lengths in ionizing atoms. The noise factor is examined for short devices where the multiplication of carriers is confined to very short length. It is seen to be affected, in contrast to the large devices, by the dead space effect. In the present paper random path length (RPL) model is introduced into the one particle Monte Carlo (OPMC) algorithm to estimate the impact ionization rate and multiplication in short avalanche photodiodes (APD). The MC simulation result is then verified with experimental results and is found to agree fairly well.
Keywords :
Monte Carlo methods; avalanche photodiodes; semiconductor device models; semiconductor device noise; Monte Carlo simulation; atoms ionization; avalanche photodiodes; carrier multiplication; impact ionization rate; multiplication noise; noise factor; one particle Monte Carlo algorithm; random free path model; random path length model; stochastic event; Avalanche breakdown; Avalanche photodiodes; Charge carrier processes; Computational modeling; Electrons; Impact ionization; Optical scattering; Phonons; Semiconductor device noise; Space exploration;
Conference_Titel :
Electrical and Computer Engineering, 2006. ICECE '06. International Conference on
Conference_Location :
Dhaka
Print_ISBN :
98432-3814-1
DOI :
10.1109/ICECE.2006.355283
