DocumentCode
2490010
Title
Multiplication Noise on Random Free Path Model In Short Avalanche Photodiodes Using The Monte Carlo Simulation
Author
Ghosh, K.K.
Author_Institution
Hooghly Eng. & Technol. Coll., West Bengal
fYear
2006
fDate
19-21 Dec. 2006
Firstpage
33
Lastpage
36
Abstract
The multiplication process is a stochastic event and induces noise as a result of describing random path lengths in ionizing atoms. The noise factor is examined for short devices where the multiplication of carriers is confined to very short length. It is seen to be affected, in contrast to the large devices, by the dead space effect. In the present paper random path length (RPL) model is introduced into the one particle Monte Carlo (OPMC) algorithm to estimate the impact ionization rate and multiplication in short avalanche photodiodes (APD). The MC simulation result is then verified with experimental results and is found to agree fairly well.
Keywords
Monte Carlo methods; avalanche photodiodes; semiconductor device models; semiconductor device noise; Monte Carlo simulation; atoms ionization; avalanche photodiodes; carrier multiplication; impact ionization rate; multiplication noise; noise factor; one particle Monte Carlo algorithm; random free path model; random path length model; stochastic event; Avalanche breakdown; Avalanche photodiodes; Charge carrier processes; Computational modeling; Electrons; Impact ionization; Optical scattering; Phonons; Semiconductor device noise; Space exploration;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical and Computer Engineering, 2006. ICECE '06. International Conference on
Conference_Location
Dhaka
Print_ISBN
98432-3814-1
Type
conf
DOI
10.1109/ICECE.2006.355283
Filename
4178401
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