• DocumentCode
    2490010
  • Title

    Multiplication Noise on Random Free Path Model In Short Avalanche Photodiodes Using The Monte Carlo Simulation

  • Author

    Ghosh, K.K.

  • Author_Institution
    Hooghly Eng. & Technol. Coll., West Bengal
  • fYear
    2006
  • fDate
    19-21 Dec. 2006
  • Firstpage
    33
  • Lastpage
    36
  • Abstract
    The multiplication process is a stochastic event and induces noise as a result of describing random path lengths in ionizing atoms. The noise factor is examined for short devices where the multiplication of carriers is confined to very short length. It is seen to be affected, in contrast to the large devices, by the dead space effect. In the present paper random path length (RPL) model is introduced into the one particle Monte Carlo (OPMC) algorithm to estimate the impact ionization rate and multiplication in short avalanche photodiodes (APD). The MC simulation result is then verified with experimental results and is found to agree fairly well.
  • Keywords
    Monte Carlo methods; avalanche photodiodes; semiconductor device models; semiconductor device noise; Monte Carlo simulation; atoms ionization; avalanche photodiodes; carrier multiplication; impact ionization rate; multiplication noise; noise factor; one particle Monte Carlo algorithm; random free path model; random path length model; stochastic event; Avalanche breakdown; Avalanche photodiodes; Charge carrier processes; Computational modeling; Electrons; Impact ionization; Optical scattering; Phonons; Semiconductor device noise; Space exploration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical and Computer Engineering, 2006. ICECE '06. International Conference on
  • Conference_Location
    Dhaka
  • Print_ISBN
    98432-3814-1
  • Type

    conf

  • DOI
    10.1109/ICECE.2006.355283
  • Filename
    4178401