Title :
A low phase noise wideband VCO in 65nm RF CMOS for low power applications
Author_Institution :
Inst. of Electron. & Inf. Eng., Hangzhou Dianzi Univ., Hangzhou, China
Abstract :
A wideband LC VCO used in low power and phase noise applications is described. A phase noise model is utilized for its lower phase noise design. A switched capacitor array, two power supply and substrate noise filters are involved in the circuit. The phase noise imported by the MOS channel current and tank less resistance is modeled to give approximate evaluation of the circuit performance. The circuit has been implemented in a standard 65 nm CMOS technology. The test result indicates that the frequency of the VCO is from 750 MHz to 1.5 GHz, and the phase noise is -125.84 dBc/Hz @1 MHz in 1.21GHz. The chip consumes less than 2.25 mW with 1.2 V power supply, and occupies 0.7 mm2 areas.
Keywords :
CMOS integrated circuits; integrated circuit design; integrated circuit modelling; low-power electronics; radiofrequency integrated circuits; voltage-controlled oscillators; MOS channel current; RF CMOS; frequency 1.21 GHz; frequency 750 MHz to 1.5 GHz; low phase noise wideband VCO; phase noise model; power 2.25 mW; power supply; size 65 nm; substrate noise filters; switched capacitor array; tank less resistance; voltage 1.2 V; voltage-controlled oscillators; wideband LC VCO; CMOS integrated circuits; Capacitance; Inductance; Phase noise; Voltage-controlled oscillators; Wideband;
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-2184-6
DOI :
10.1109/ICMMT.2012.6229997