Anisotropy and Non-Uniformity Effects on the Strain Relaxation in GaInAsP/InP Quantum Wire Structures

Author

Ferdous, Fahmida ; Haque, A.

Author_Institution

Dept. of Electr. & Electron. Eng., Bangladesh Univ. of Eng. & Technol., Dhaka

fYear

2006

fDate

19-21 Dec. 2006

Firstpage

41

Lastpage

44

Abstract

Calculation of the strain relaxation in membrane GaInAsP/InP quantum wire laser is performed using finite element method. Effect of strain-compensating barriers in multiple quantum wire stacks on the strain relaxation is investigated using both isotropic and anisotropic models. It is found that the difference between the two results increases when the wires are narrower and this effect is more pronounced in the barrier regions

Keywords

III-V semiconductors; arsenic compounds; finite element analysis; gallium compounds; indium compounds; magnetic anisotropy; quantum well lasers; relaxation; GaInAsP-InP; anisotropic models; anisotropy effect; finite element method; isotropic models; nonuniformity effect; quantum wire laser; strain relaxation; strain-compensating barriers; Anisotropic magnetoresistance; Biomembranes; Capacitive sensors; Equations; Finite element methods; Indium phosphide; Quantum computing; Quantum well lasers; Semiconductor lasers; Wire;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 2006. ICECE '06. International Conference on

Conference_Location

Dhaka

Print_ISBN

98432-3814-1

Type

conf

DOI

10.1109/ICECE.2006.355285

Filename

4178403