Design of X-band oscillator based on substrate integrated circular cavity

Author

Liu, Qiang ; Yang, Yang ; Huang, Kama

Author_Institution

Coll. of Electron. & Inf. Eng., Sichuan Univ., Chengdu, China

Volume

1

fYear

2012

fDate

5-8 May 2012

Firstpage

1

Lastpage

3

Abstract

Based on the substrate integrated circular cavity (SICC), a novel X-band dielectric resonator oscillator is developed. Owing to the high quality factor and planar structure of the SICC, the advantages of our proposed oscillator consist of low phase noise, small size, low cost, and planar integration. In this paper, the series reflection type is selected as the topology of our proposed oscillator and the oscillator is analyzed with the concept of negative resistance. The oscillator performance is characterized by an output power of 8.5dBm at 8.41 GHz and the measured phase noise is -119.67 dBc/Hz at 10 kHz offset.

Keywords

Q-factor; dielectric resonator oscillators; microwave oscillators; phase noise; X-band dielectric resonator oscillator; X-band oscillator; frequency 8.41 GHz; negative resistance; oscillator performance; phase noise; planar integration; planar structure; quality factor; series reflection type; substrate integrated circular cavity; Cavity resonators; Microwave oscillators; Phase noise; Q factor; Resonant frequency; Substrates; Dielectric resonator oscillator (DRO); phase noise; substrate integrated circular cavity (SICC); substrate integrated waveguide (SIW);

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on

Conference_Location

Shenzhen

Print_ISBN

978-1-4673-2184-6

Type

conf

DOI

10.1109/ICMMT.2012.6229999

Filename

6229999