Title :
Design of 100MHz wideband Doherty amplifier for 1.95GHz LTE-Advanced application
Author :
Sun, Yinjin ; Zhu, Xiaowei ; Yang, Mengsu ; Xia, Jing
Author_Institution :
Sch. of Inf. Sci. & Eng., Southeast Univ., Nanjing, China
Abstract :
A 100MHz wideband Doherty power amplifier (DPA) at 1.95GHz is presented in this article. To enhance the performance, asymmetrical DPA topology is adopted in the schematic. The carrier power amplifier and peaking amplifier are set to obtain high-efficiency and high-output power separately by the same GaN HEMT device. Measurement results indicate an output power up to 49.3dBm and an average drain efficiency of 40% at an 8dB back off power. Moreover, for LET-Advanced (LTE-A) signals with different bandwidth and a peak-to-average power ratio (PAPR) has shown an adjacent-channel leakage ratio (ACLR) of about -33dBc at an output power of 42dBm.
Keywords :
HEMT integrated circuits; III-V semiconductors; Long Term Evolution; UHF power amplifiers; gallium compounds; integrated circuit design; network topology; power amplifiers; wide band gap semiconductors; wideband amplifiers; GaN; HEMT device; LET-advanced signals; LTE-advanced application; adjacent-channel leakage ratio; asymmetrical DPA topology; carrier power amplifier; drain efficiency; frequency 1.95 GHz; frequency 100 MHz; peak-to-average power ratio; peaking amplifier; wideband Doherty power amplifier; Bandwidth; Gain; Gallium nitride; Peak to average power ratio; Power amplifiers; Power generation; Power measurement; Doherty power amplifier (DPA); GaN; LTE-Advanced (LET-A); adjacent-channel leakage ratio (ACLR); drain efficiency; wideband;
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-2184-6
DOI :
10.1109/ICMMT.2012.6230003
