Design of 100MHz wideband Doherty amplifier for 1.95GHz LTE-Advanced application

Author

Sun, Yinjin ; Zhu, Xiaowei ; Yang, Mengsu ; Xia, Jing

Author_Institution

Sch. of Inf. Sci. & Eng., Southeast Univ., Nanjing, China

Volume

1

fYear

2012

fDate

5-8 May 2012

Firstpage

1

Lastpage

4

Abstract

A 100MHz wideband Doherty power amplifier (DPA) at 1.95GHz is presented in this article. To enhance the performance, asymmetrical DPA topology is adopted in the schematic. The carrier power amplifier and peaking amplifier are set to obtain high-efficiency and high-output power separately by the same GaN HEMT device. Measurement results indicate an output power up to 49.3dBm and an average drain efficiency of 40% at an 8dB back off power. Moreover, for LET-Advanced (LTE-A) signals with different bandwidth and a peak-to-average power ratio (PAPR) has shown an adjacent-channel leakage ratio (ACLR) of about -33dBc at an output power of 42dBm.

Keywords

HEMT integrated circuits; III-V semiconductors; Long Term Evolution; UHF power amplifiers; gallium compounds; integrated circuit design; network topology; power amplifiers; wide band gap semiconductors; wideband amplifiers; GaN; HEMT device; LET-advanced signals; LTE-advanced application; adjacent-channel leakage ratio; asymmetrical DPA topology; carrier power amplifier; drain efficiency; frequency 1.95 GHz; frequency 100 MHz; peak-to-average power ratio; peaking amplifier; wideband Doherty power amplifier; Bandwidth; Gain; Gallium nitride; Peak to average power ratio; Power amplifiers; Power generation; Power measurement; Doherty power amplifier (DPA); GaN; LTE-Advanced (LET-A); adjacent-channel leakage ratio (ACLR); drain efficiency; wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on

Conference_Location

Shenzhen

Print_ISBN

978-1-4673-2184-6

Type

conf

DOI

10.1109/ICMMT.2012.6230003

Filename

6230003