A 20-dB gain W-band InP DHBT power amplifier

Author

Hongfei Yao ; Yuxiong Cao ; Xiaoxi Ning ; Yongbo Su ; Zhi Jin

Author_Institution

Inst. of Microelectron., Beijing, China

Volume

2

fYear

2012

fDate

5-8 May 2012

Firstpage

1

Lastpage

4

Abstract

A two-stage double heterojunction bipolar transistor (DHBT) power MMIC fabricated in InP technology is realized using coplanar waveguide structure. The output cell unit consists of four parallel cascode fingers. Sixteen fingers are at output stage from which the power is combined. Broad-band, low-loss matching networks lead to high gain and high combining efficiency. The chip area is 1.5×1.7 mm². Measurements show that small signal gain is above 20 dB over 75.5 GHz ~ 84.5 GHz frequency band. Simulated saturated power is 19.7 dBm @ 89 GHz and the actual output power is to be measured once the W-band power source arrive.

Keywords

III-V semiconductors; MMIC; heterojunction bipolar transistors; indium compounds; millimetre wave power amplifiers; 20-dB gain W-band DHBT power amplifier; DHBT power MMIC; InP; W-band power source arrive; broad-band network; coplanar waveguide structure; double heterojunction bipolar transistor; frequency 88 GHz; frequency band; low-loss matching network; output cell unit; parallel cascode finger; DH-HEMTs; Fingers; Gain; Indium phosphide; Layout; Power amplifiers; Power generation; DHBT; InP; Power amplifier; cascode;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on

Conference_Location

Shenzhen

Print_ISBN

978-1-4673-2184-6

Type

conf

DOI

10.1109/ICMMT.2012.6230014

Filename

6230014