Title :
Design of FDD/TDD dual mode power amplifier for LTE application
Author :
Yanjun, Peng ; Feiyan, Xing ; Yi, Shen ; Ling, Sun
Author_Institution :
Jiangsu Province Key Lab. of ASIC Design, Nantong Univ., Nantong, China
Abstract :
LTE technology supports flexible carrier bandwidths, from below 5MHz up to 20MHz and also supports both FDD (Frequency Division Duplex) and TDD (Time Division Duplex) modulation schemes. Ten paired and four unpaired spectrum bands have so far been identified by 3GPP for LTE and there are more bands to come. Usually, each band need one linear PA for this band and more bands need more PAs, which will add cost for handsets. In this paper, we report a design of low cost FDD/TDD dual mode LTE handset power amplifier that covers 1900~1920MHz TDD band and 1920~1980MHz FDD band based on InGaP/GaAs technology. Under a single supply voltage of +3.3V, this dual mode power amplifier exhibits linear output power of 31.5dBm (P1dB), small signal gain of 30.5dB and the power added efficiency (PAE) of 35% at P1dB. The die size is only 1.3mm×1.2mm.
Keywords :
III-V semiconductors; Long Term Evolution; UHF power amplifiers; frequency division multiplexing; gallium arsenide; indium compounds; mobile handsets; phosphorus compounds; power amplifiers; time division multiplexing; 3GPP; FDD-TDD dual mode LTE handset power amplifier; InGaP-GaAs; InGaP-GaAs technology; LTE application; die size; frequency 1900 MHz to 1920 MHz; frequency 1920 MHz to 1980 MHz; frequency division duplex modulation; linear PA; linear output power; small signal gain; time division duplex modulation; unpaired spectrum band; voltage 3.3 V; CMOS integrated circuits; Gallium arsenide; Power amplifiers; Power generation; Radio frequency; Substrates; Telephone sets;
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2012 International Conference on
Conference_Location :
Shenzhen
Print_ISBN :
978-1-4673-2184-6
DOI :
10.1109/ICMMT.2012.6230015
