DocumentCode :
2490493
Title :
The bending properties of flexible ITO films
Author :
Zhinong, Yu ; Longfeng, Xiang ; Wei, Xue ; Huaqing, WANG
Author_Institution :
Beijing Inst. of Technol., Beijing
fYear :
2007
fDate :
17-19 Oct. 2007
Firstpage :
148
Lastpage :
150
Abstract :
The electrical and optical properties of flexible ITO films as a function of the radiuses of the films to be bent has been investigated. The threshold radius, keeping the resistivity almost constant, is 0.75 cm and 1 cm for the film without buffer layer and one with buffer layer, respectively. The transmittance almost keeps same regardless of the radius.
Keywords :
bending; electrical resistivity; indium compounds; semiconductor thin films; wide band gap semiconductors; InSnO; bending; buffer layer; electrical properties; flexible films; optical properties; transmittance; Buffer layers; Conductive films; Conductivity; Electrical resistance measurement; Indium tin oxide; Optical buffering; Optical films; Positron emission tomography; Semiconductor films; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communication and Optoelectronics Conference, 2007 Asia
Conference_Location :
Shanghai
Print_ISBN :
978-0-9789217-2-9
Electronic_ISBN :
978-0-9789217-2-9
Type :
conf
DOI :
10.1109/AOE.2007.4410733
Filename :
4410733
Link To Document :
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