Projected Performance of InxGa1-xN-Based Multijunction Solar Cells

Author

Islam, Md Rafiqul ; Rayhan, M.A. ; Hossain, M.E. ; Bhuiyan, Ashraful G. ; Islam, M.R. ; Yamamoto, A.

Author_Institution

Dept. of Electr. & Electron. Eng., Khulna Univ. of Eng. & Technol.

fYear

2006

fDate

19-21 Dec. 2006

Firstpage

241

Lastpage

244

Abstract

This paper reports the theoretical design and performance of In _xGa_1-xN-based multijunction solar cells for high efficiency. A simulation model is developed which optimizes the design of MJ solar cells for high efficiency. The efficiency was optimized by optimizing the band gap and thickness of different cells while keeping the current mismatch between different cells below 0.2%. The efficiency is found to be varied from 34.2% for two junctions to 45.22% for six junctions. Further increase in junction does not significantly increase the efficiency. An efficiency of about 46% is achievable for a seven junctions with a photocurrent density of 8.33 mA/cm² and an open-circuit voltage of 6.26 V. The photocurrent density and open circuit voltage of each junction are calculated under AM 1.5 and it is assumed that each junction absorbs the solar photons that are not absorbed by the preceding one

Keywords

III-V semiconductors; energy gap; gallium compounds; indium compounds; photoconductivity; photons; solar cells; wide band gap semiconductors; 6.26 V; InGaN; band gap; multijunction solar cells; open circuit voltage; photocurrent density; solar photons; Charge carriers; Current density; Design engineering; Design optimization; High performance computing; Lattices; Photoconductivity; Photonic band gap; Photovoltaic cells; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering, 2006. ICECE '06. International Conference on

Conference_Location

Dhaka

Print_ISBN

98432-3814-1

Type

conf

DOI

10.1109/ICECE.2006.355335

Filename

4178453